IXTT82N25P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTT82N25P


：	IXTT82N25P
：	Mosfets
：	IXYS
：	N-channel 250 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	250V
Drain-Source On Resistance-Max:	35mΩ
Rated Power Dissipation:	500\|W
Qg Gate Charge:	142nC
Package Style:	TO-268 (D3PAK)
Mounting Method:	Surface Mount

PDF(1)

119.9008

3597.024

102.5028

9225.252

150

100.6383

15095.745

300

98.1964

29458.92

600

95.8962

57537.72

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