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IXTY08N100D2

  • IXTY08N100D2
  • IXTY08N100D2
IXTY08N100D2
Mosfets
IXYS
N-Channel 1000
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1000V
Drain-Source On Resistance-Max:21Ω
Rated Power Dissipation:60|W
Qg Gate Charge:14.6nC
Package Style: TO-252AA
Mounting Method:Surface Mount
PDF(1)

70

30.9049

2163.343

210

26.4565

5555.865

350

26.0209

9107.315

1400

25.0177

35024.78

2100

24.7239

51920.19

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