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IXTZ550N055T2

  • IXTZ550N055T2
  • IXTZ550N055T2
IXTZ550N055T2
Mosfets
IXYS
N Channel 55 V
-
Tube
0
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TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:55V
Drain-Source On Resistance-Max:1mΩ
Rated Power Dissipation:600|W
Qg Gate Charge:595nC
Mounting Method:Surface Mount
: 0

20

561.8404

11236.808

40

469.825

18793

60

460.6245

27637.47

80

454.3016

36344.128

100

449.4175

44941.75

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