TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain-Source On Resistance-Max: | 0.1Ω |
Rated Power Dissipation: | 179W |
Qg Gate Charge: | 95nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 39A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 16ns |
Rise Time: | 10ns |
Fall Time: | 6ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2.8V |
Technology: | SiC |
Input Capacitance: | 1825pF |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
30
255.7606
7672.818
60
213.0612
12783.672
90
209.3223
18839.007
150
204.5801
30687.015