TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain-Source On Resistance-Max: | 28mΩ |
Rated Power Dissipation: | 510W |
Qg Gate Charge: | 220nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 102A |
Turn-on Delay Time: | 21.6ns |
Turn-off Delay Time: | 41ns |
Rise Time: | 21ns |
Fall Time: | 10ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.7V |
Technology: | SiC |
Input Capacitance: | 2943pF |
Package Style: | TO-247-4L |
Mounting Method: | Through Hole |
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419.0802
12572.406