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NTH4L022N120M3S

  • NTH4L022N120M3S
  • NTH4L022N120M3S
NTH4L022N120M3S
Mosfets
onsemi
N-Channel 1200
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1200V
Drain-Source On Resistance-Max:30mΩ
Rated Power Dissipation:352W
Qg Gate Charge:151nC
Gate-Source Voltage-Max [Vgss]:18V
Drain Current:68A
Turn-on Delay Time:18ns
Turn-off Delay Time:48ns
Rise Time:24ns
Fall Time:13ns
Operating Temp Range:-55°C to +175°C
Package Style: TO-247-4L
Mounting Method:Through Hole
PDF(1)

450

393.2011

176940.495

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