TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 900V |
Drain-Source On Resistance-Max: | 84mΩ |
Rated Power Dissipation: | 221W |
Qg Gate Charge: | 87nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 46A |
Turn-on Delay Time: | 22ns |
Turn-off Delay Time: | 31ns |
Rise Time: | 33ns |
Fall Time: | 11ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.7V |
Technology: | SiC |
Input Capacitance: | 1770pF |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
30
110.7002
3321.006