TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 4.1Ω |
Rated Power Dissipation: | 350mW |
Qg Gate Charge: | 0.55nC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | 230mA |
Turn-on Delay Time: | 19ns |
Turn-off Delay Time: | 65ns |
Rise Time: | 30ns |
Fall Time: | 38ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 0.9V |
Technology: | Si |
Input Capacitance: | 31pF |
Package Style: | SOT-23 (SC-59,TO-236) |
Mounting Method: | Surface Mount |
3000
0.8004
2401.2
9000
0.6638
5974.2
15000
0.661
9915
45000
0.6437
28966.5
75000
0.6401
48007.5