TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 12V |
Drain-Source On Resistance-Max: | 33mΩ |
Rated Power Dissipation: | 1.7W |
Qg Gate Charge: | 100nC |
Gate-Source Voltage-Max [Vgss]: | 12V |
Drain Current: | 11.8A |
Turn-on Delay Time: | 18ns |
Turn-off Delay Time: | 85ns |
Rise Time: | 90ns |
Fall Time: | 57ns |
Operating Temp Range: | -65°C to +150°C |
Gate Source Threshold: | 0.9V |
Technology: | TrenchMOS |
Height - Max: | 0.65mm |
Length: | 2.1mm |
Input Capacitance: | 2875pF |
Package Style: | SOT-1220 |
Mounting Method: | Surface Mount |
3000
2.5354
7606.2
6000
2.0998
12598.8
9000
2.0825
18742.5
15000
2.0582
30873
30000
2.0237
60711