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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 239mΩ |
| Rated Power Dissipation: | 175W |
| Qg Gate Charge: | 45nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 27ns |
| Rise Time: | 17ns |
| Fall Time: | 16ns |
| Operating Temp Range: | -55°C to +200°C |
| Gate Source Threshold: | 3.5V |
| Technology: | SiC |
| Input Capacitance: | 650pF |
| Mounting Method: | Through Hole |
1
366.319
366.319
5
340.0043
1700.0215
20
318.8775
6377.55
50
305.6441
15282.205
125
292.9984
36624.8
