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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 22.4MΩ |
| Rated Power Dissipation: | 427W |
| Qg Gate Charge: | 172nC |
| Gate-Source Voltage-Max [Vgss]: | 22V |
| Drain Current: | 118A |
| Turn-on Delay Time: | 30ns |
| Turn-off Delay Time: | 64ns |
| Rise Time: | 44ns |
| Fall Time: | 31ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 5.6V |
| Technology: | SiC |
| Input Capacitance: | 2884pF |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
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