TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 22.4MΩ |
Rated Power Dissipation: | 427W |
Qg Gate Charge: | 172nC |
Gate-Source Voltage-Max [Vgss]: | 22V |
Drain Current: | 118A |
Turn-on Delay Time: | 30ns |
Turn-off Delay Time: | 64ns |
Rise Time: | 44ns |
Fall Time: | 31ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 5.6V |
Technology: | SiC |
Input Capacitance: | 2884pF |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
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