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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 100mΩ |
| Rated Power Dissipation: | 270W |
| Qg Gate Charge: | 105nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 45A |
| Turn-on Delay Time: | 19ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 20ns |
| Fall Time: | 28ns |
| Operating Temp Range: | -55°C to +200°C |
| Gate Source Threshold: | 3.5V |
| Technology: | SiC |
| Height - Max: | 20.15mm |
| Length: | 15.75mm |
| Input Capacitance: | 1700pF |
| Mounting Method: | Through Hole |
1
572.196
572.196
4
534.9582
2139.8328
15
501.885
7528.275
40
478.5999
19143.996
100
457.7568
45775.68
