SCT3160KLGC11 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SCT3160KLGC11


：	SCT3160KLGC11
：	Mosfets
：	ROHM
：	SCT3160KL Serie
：	-
：	Tube
：	0
：	-
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1200V
Drain-Source On Resistance-Max:	208mΩ
Rated Power Dissipation:	103\|W
Qg Gate Charge:	42nC
Mounting Method:	Through Hole

: 0

165.4778

4964.334

140.4601

12641.409

120

139.0213

16682.556

300

134.421

40326.3

450

132.4047

59582.115

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LINEAR SILICON NANOSTAMP: PERIOD

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Additional Information:

PINLITE

0-64

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