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SCTW40N120G2VAG

  • SCTW40N120G2VAG
  • SCTW40N120G2VAG
SCTW40N120G2VAG
Mosfets
STMicroelectronics
26- HIGH VOLTAG
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:1200V
Drain-Source On Resistance-Max:105mΩ
Rated Power Dissipation:290W
Qg Gate Charge:63nC
Drain Current:333A
Turn-on Delay Time:11ns
Turn-off Delay Time:18ns
Rise Time:5ns
Fall Time:13ns
Operating Temp Range:-55°C to +200°C
Gate Source Threshold:3.2V
Technology:SiC
Input Capacitance:1230pF
Package Style: TO-247-3
Mounting Method:Through Hole
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