SIHB15N65E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHB15N65E-GE3


：	SIHB15N65E-GE3
：	Mosfets
：	Vishay
：	E Series N-Chan
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	280mΩ
Rated Power Dissipation:	34\|W
Qg Gate Charge:	48nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

: 0

37.5216

1876.08

2000

30.0437

60087.4

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