SIHB22N60E-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHB22N60E-E3


：	SIHB22N60E-E3
：	Mosfets
：	Vishay
：	E Series N-Chan
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	0.18Ω
Rated Power Dissipation:	227\|W
Qg Gate Charge:	86nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

: 0

1000

34.502

34502

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