SIHB6N65E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHB6N65E-GE3


：	SIHB6N65E-GE3
：	Mosfets
：	Vishay
：	Single N-Channe
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	700V
Drain-Source On Resistance-Max:	0.6Ω
Rated Power Dissipation:	78\|W
Qg Gate Charge:	48nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

: 0

17.256

862.8

200

14.804

2960.8

750

14.3024

10726.8

1250

14.0845

17605.625

2500

13.8008

34502

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