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SIHD14N60E-GE3

  • SIHD14N60E-GE3
  • SIHD14N60E-GE3
  • SIHD14N60E-GE3
  • SIHD14N60E-GE3
SIHD14N60E-GE3
Mosfets
Vishay
SIHD14N60E Seri
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:13Ω
Rated Power Dissipation:147W
Qg Gate Charge:32nC
Drain Current:13A
Turn-on Delay Time:15ns
Turn-off Delay Time:35ns
Rise Time:19ns
Fall Time:15ns
Operating Temp Range:-55°C to +150°C
Input Capacitance:1205pF
Package Style: TO-252-3 (DPAK)
Mounting Method:Surface Mount
PDF(1)

75

20.7013

1552.5975

225

17.8236

4010.31

750

17.256

12942

1500

16.8204

25230.6

3000

16.5366

49609.8

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