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SIHD2N80E-GE3

  • SIHD2N80E-GE3
  • SIHD2N80E-GE3
  • SIHD2N80E-GE3
  • SIHD2N80E-GE3
SIHD2N80E-GE3
Mosfets
Vishay
AVAILABLE Q2/20
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:800V
Drain-Source On Resistance-Max:2.75Ω
Rated Power Dissipation:62.5W
Qg Gate Charge:9.8nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:2.8A
Turn-on Delay Time:11ns
Turn-off Delay Time:19ns
Rise Time:7ns
Fall Time:27ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Input Capacitance:315pF
Package Style: TO-252-3 (DPAK)
Mounting Method:Surface Mount
PDF(1)

50

11.4247

571.235

200

9.9199

1983.98

750

9.6362

7227.15

2000

9.3424

18684.8

5000

9.1246

45623

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