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SIHG14N50D-GE3

  • SIHG14N50D-GE3
  • SIHG14N50D-GE3
  • SIHG14N50D-GE3
  • SIHG14N50D-GE3
SIHG14N50D-GE3
Mosfets
Vishay
N Channel 500 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:500V
Drain-Source On Resistance-Max:0.4Ω
Rated Power Dissipation:208|W
Qg Gate Charge:29nC
Package Style: TO-247AC
Mounting Method:Through Hole
PDF(1)

500

28.8985

14449.25

1000

23.5788

23578.8

1500

23.2951

34942.65

2000

23.1432

46286.4

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