SIHG14N50D-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHG14N50D-GE3


：	SIHG14N50D-GE3
：	Mosfets
：	Vishay
：	N Channel 500 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	500V
Drain-Source On Resistance-Max:	0.4Ω
Rated Power Dissipation:	208\|W
Qg Gate Charge:	29nC
Package Style:	TO-247AC
Mounting Method:	Through Hole

PDF(1)

500

28.8985

14449.25

1000

23.5788

23578.8

1500

23.2951

34942.65

2000

23.1432

46286.4

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