SIHG24N65E-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHG24N65E-E3


：	SIHG24N65E-E3
：	Mosfets
：	Vishay
：	E-Series N-Chan
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	0.145Ω
Rated Power Dissipation:	250\|W
Qg Gate Charge:	122nC
Package Style:	TO-247AC
Mounting Method:	Flange Mount

: 0

70.7366

3536.83

150

60.2391

9035.865

250

59.2359

14808.975

500

57.939

28969.5

1000

56.6421

56642.1

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E-Series N-Channel 650 V 0.145 Ω 122 nC Flange Mount Power Mosfet - TO-247AC

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