SIHG24N65E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHG24N65E-GE3


：	SIHG24N65E-GE3
：	Mosfets
：	Vishay
：	E-Series N-Ch 6
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	0.145Ω
Rated Power Dissipation:	250\|W
Qg Gate Charge:	122nC
Package Style:	TO-247AC
Mounting Method:	Flange Mount

PDF(1)

61.2423

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53.3388

4000.41

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12830.6

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50.1774

25088.7

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