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SIHP11N80AE-GE3

  • SIHP11N80AE-GE3
  • SIHP11N80AE-GE3
SIHP11N80AE-GE3
Mosfets
Vishay
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:800V
Drain-Source On Resistance-Max:450mΩ
Rated Power Dissipation:78W
Qg Gate Charge:42nC
Gate-Source Voltage-Max [Vgss]:±30V
Drain Current:8A
Turn-on Delay Time:26ns
Turn-off Delay Time:50ns
Rise Time:30ns
Fall Time:54ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:MDmesh
Input Capacitance:804pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
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29040.6

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