SIHP12N50C-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHP12N50C-E3


：	SIHP12N50C-E3
：	Mosfets
：	Vishay
：	N-Channel 500 V
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	500V
Drain-Source On Resistance-Max:	0.555Ω
Rated Power Dissipation:	208\|W
Qg Gate Charge:	48nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Flange Mount

: 0

1000

32.7794

32779.4

2000

26.4565

52913

3000

26.1628

78488.4

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