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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SIHP22N65E-GE3
SIHP22N65E-GE3
:
SIHP22N65E-GE3
:
Mosfets
:
Vishay
:
E Series N Chan
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
700V
Drain-Source On Resistance-Max:
0.18Ω
Rated Power Dissipation:
227|W
Qg Gate Charge:
110nC
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount
PDF(1)
1000
38.6767
38676.7
Analog Devices Inc.
LT1577CS-ADJ/ADJ-TRPBF
IC LNR REG CTRLR 2OUT 16SOIC
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HCM49 Series 3.6864 MHz ±30 ppm 18 pF -40 to +85 °C Surface Mount AT-CUT Crystal
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STM6315SDW13F
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