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SIHP33N60EF-GE3

  • SIHP33N60EF-GE3
  • SIHP33N60EF-GE3
SIHP33N60EF-GE3
Mosfets
Vishay
Single N-Channe
-
Tube
0
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:0.098Ω
Rated Power Dissipation:278W
Qg Gate Charge:155nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:33A
Turn-on Delay Time:28ns
Turn-off Delay Time:161ns
Rise Time:43ns
Fall Time:48ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:Si
Height - Max:9.14mm
Length:10.52mm
Input Capacitance:3454pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
: 0

1

76.482

76.482

15

69.4397

1041.5955

50

66.562

3328.1

150

63.9782

9596.73

500

61.2423

30621.15

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