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SIHP6N65E-GE3

  • SIHP6N65E-GE3
  • SIHP6N65E-GE3
  • SIHP6N65E-GE3
  • SIHP6N65E-GE3
SIHP6N65E-GE3
Mosfets
Vishay
E Series N Chan
-
Tube
0
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:700V
Drain-Source On Resistance-Max:0.6Ω
Rated Power Dissipation:78|W
Qg Gate Charge:48nC
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Flange Mount
: 0

1000

20.2755

20275.5

2000

16.5366

33073.2

3000

16.3848

49154.4

4000

16.2428

64971.2

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