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SIHP7N60E-GE3

  • SIHP7N60E-GE3
  • SIHP7N60E-GE3
  • SIHP7N60E-GE3
  • SIHP7N60E-GE3
SIHP7N60E-GE3
Mosfets
Vishay
MOSFET 600V 600
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:600mΩ
Rated Power Dissipation:78|W
Qg Gate Charge:20nC
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

18.6849

934.245

200

16.1009

3220.18

750

15.5234

11642.55

1250

15.2396

19049.5

2500

14.9559

37389.75

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