SIHP7N60E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHP7N60E-GE3


：	SIHP7N60E-GE3
：	Mosfets
：	Vishay
：	MOSFET 600V 600
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	600mΩ
Rated Power Dissipation:	78\|W
Qg Gate Charge:	20nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

18.6849

934.245

200

16.1009

3220.18

750

15.5234

11642.55

1250

15.2396

19049.5

2500

14.9559

37389.75

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