SIHW47N60E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHW47N60E-GE3


：	SIHW47N60E-GE3
：	Mosfets
：	Vishay
：	E Series N-Chan
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	0.064Ω
Rated Power Dissipation:	359\|W
Qg Gate Charge:	225nC
Package Style:	TO-247AD
Mounting Method:	Flange Mount

: 0

184.3046

172.662

863.31

161.8808

4047.02

100

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15311.58

250

147.5024

36875.6

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