TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 0.19Ω |
Rated Power Dissipation: | 208W |
Qg Gate Charge: | 87nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 20.7A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 67ns |
Rise Time: | 5ns |
Fall Time: | 4.5ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | CoolMOS |
Input Capacitance: | 2400pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
50
76.1982
3809.91
1000
60.9586
60958.6