TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 0.125Ω |
Rated Power Dissipation: | 110W |
Qg Gate Charge: | 39nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 18A |
Turn-on Delay Time: | 15ns |
Turn-off Delay Time: | 40ns |
Rise Time: | 30ns |
Fall Time: | 10ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 2.4mm |
Length: | 6.6mm |
Input Capacitance: | 940pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
2500
13.4411
33602.75