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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STE30NK90Z
STE30NK90Z
:
STE30NK90Z
:
Mosfets
:
STMicroelectronics
:
N-Channel 900 V
:
-
:
Tube
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TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
900V
Drain-Source On Resistance-Max:
0.26Ω
Rated Power Dissipation:
500|W
Qg Gate Charge:
490nC
Package Style:
ISOTOP
Mounting Method:
Chassis Mount
PDF(1)
10
353.6632
3536.632
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