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STF10N60M2

  • STF10N60M2
  • STF10N60M2
STF10N60M2
Mosfets
STMicroelectronics
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:0.6Ω
Rated Power Dissipation:25W
Qg Gate Charge:13.5nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:7.5A
Turn-on Delay Time:8.8ns
Turn-off Delay Time:32.5ns
Rise Time:8ns
Fall Time:13.2ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:400pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
PDF(1)

1000

24.1564

24156.4

2000

19.5562

39112.4

3000

19.2623

57786.9

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