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STF10NM60N

  • STF10NM60N
  • STF10NM60N
STF10NM60N
Mosfets
STMicroelectronics
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:0.55Ω
Rated Power Dissipation:25W
Qg Gate Charge:19nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:10A
Turn-on Delay Time:10ns
Turn-off Delay Time:32ns
Rise Time:12ns
Fall Time:15ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:540pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
PDF(1)

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72.0236

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57655.3

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