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STF11N60M2-EP

  • STF11N60M2-EP
  • STF11N60M2-EP
STF11N60M2-EP
Mosfets
STMicroelectronics
STF11N60M2 Seri
-
Tube
0
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:595mΩ
Rated Power Dissipation:25W
Qg Gate Charge:12.4nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:7.5A
Turn-on Delay Time:9ns
Turn-off Delay Time:26ns
Rise Time:5.5ns
Fall Time:8ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:MDmesh
Input Capacitance:390pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
: 0

1000

16.6785

16678.5

2000

13.583

27166

3000

13.3752

40125.6

4000

13.2993

53197.2

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