TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 0.279Ω |
Rated Power Dissipation: | 90W |
Qg Gate Charge: | 31nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 12A |
Rise Time: | 7ns |
Fall Time: | 6ns |
Gate Source Threshold: | 4V |
Technology: | MDmesh |
Input Capacitance: | 1250pF |
Package Style: | TO-220FP (TO-220FPAB) |
Mounting Method: | Through Hole |
1000
33.9245
33924.5
2000
27.176
54352