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STF35N60DM2

  • STF35N60DM2
  • STF35N60DM2
STF35N60DM2
Mosfets
STMicroelectronics
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:0.11Ω
Rated Power Dissipation:40W
Qg Gate Charge:54nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:28A
Turn-on Delay Time:21.2ns
Turn-off Delay Time:68ns
Rise Time:17ns
Fall Time:10.7ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:MDmesh
Input Capacitance:2400pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
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1000

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