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STF7N60M2

  • STF7N60M2
  • STF7N60M2
STF7N60M2
Mosfets
STMicroelectronics
STF7N60M2 Serie
-
Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:950mΩ
Rated Power Dissipation:20W
Qg Gate Charge:8.8nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:5A
Turn-on Delay Time:7.6ns
Turn-off Delay Time:19.3ns
Rise Time:7.2ns
Fall Time:15.9ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:271pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
PDF(1)

50

12.8635

643.175

200

11.2169

2243.38

750

10.7812

8085.9

2000

10.4975

20995

5000

10.2797

51398.5

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