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STFW3N170

  • STFW3N170
  • STFW3N170
  • STFW3N170
  • STFW3N170
STFW3N170
Mosfets
STMicroelectronics
STFW3N170 Serie
-
Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:1700V
Drain-Source On Resistance-Max:13Ω
Rated Power Dissipation:63|W
Qg Gate Charge:44nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:2.6A
Turn-on Delay Time:25ns
Turn-off Delay Time:51ns
Rise Time:9ns
Fall Time:53ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Height - Max:26.7mm
Length:15.7mm
Input Capacitance:1100pF
Package Style: TO-3PF
Mounting Method:Through Hole
PDF(1)

300

65.9845

19795.35

600

53.9163

32349.78

900

53.1968

47877.12

1200

52.7612

63313.44

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