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STFW42N60M2-EP

  • STFW42N60M2-EP
  • STFW42N60M2-EP
  • STFW42N60M2-EP
  • STFW42N60M2-EP
STFW42N60M2-EP
Mosfets
STMicroelectronics
600 V 0.076 Ohm
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:87mΩ
Rated Power Dissipation:63|W
Qg Gate Charge:55nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:34A
Turn-on Delay Time:16.5ns
Turn-off Delay Time:96.5ns
Rise Time:9.5ns
Fall Time:8ns
Gate Source Threshold:3V
Technology:MDmesh
Height - Max:26.7mm
Length:15.7mm
Input Capacitance:2370pF
Package Style: TO-3PF
Mounting Method:Through Hole
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