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STP100N8F6

  • STP100N8F6
  • STP100N8F6
STP100N8F6
Mosfets
STMicroelectronics
N-Channel 80 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:80V
Drain-Source On Resistance-Max:9mΩ
Rated Power Dissipation:176W
Qg Gate Charge:100nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:100A
Turn-on Delay Time:33ns
Turn-off Delay Time:103ns
Rise Time:46ns
Fall Time:21ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:4V
Input Capacitance:5955pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

1000

15.0977

15097.7

2000

12.2961

24592.2

3000

12.1442

36432.6

4000

12.0782

48312.8

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