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STP10N60M2

  • STP10N60M2
  • STP10N60M2
STP10N60M2
Mosfets
STMicroelectronics
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:600mΩ
Rated Power Dissipation:85W
Qg Gate Charge:13.5nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:7.5A
Turn-on Delay Time:8.8ns
Turn-off Delay Time:32.5ns
Rise Time:8ns
Fall Time:13.2ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:400pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

24.1564

1207.82

200

20.7013

4140.26

500

20.1237

10061.85

1250

19.5562

24445.25

2000

19.2623

38524.6

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