TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 80V |
Drain-Source On Resistance-Max: | 0.0065Ω |
Rated Power Dissipation: | 200W |
Qg Gate Charge: | 150nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 110A |
Turn-on Delay Time: | 24ns |
Turn-off Delay Time: | 162ns |
Rise Time: | 61ns |
Fall Time: | 48ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4.5V |
Technology: | Si |
Height - Max: | 9.15mm |
Length: | 10.4mm |
Input Capacitance: | 9130pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
1
19.4042
19.4042
40
17.3979
695.916
150
16.6785
2501.775
400
16.1009
6440.36
1500
15.5234
23285.1