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STP110N8F6

  • STP110N8F6
  • STP110N8F6
STP110N8F6
Mosfets
STMicroelectronics
Single N-Channe
-
Tube
0
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:80V
Drain-Source On Resistance-Max:0.0065Ω
Rated Power Dissipation:200W
Qg Gate Charge:150nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:110A
Turn-on Delay Time:24ns
Turn-off Delay Time:162ns
Rise Time:61ns
Fall Time:48ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:4.5V
Technology:Si
Height - Max:9.15mm
Length:10.4mm
Input Capacitance:9130pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
: 0

1

19.4042

19.4042

40

17.3979

695.916

150

16.6785

2501.775

400

16.1009

6440.36

1500

15.5234

23285.1

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