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STP11NM60FD

  • STP11NM60FD
  • STP11NM60FD
STP11NM60FD
Mosfets
STMicroelectronics
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:0.45Ω
Rated Power Dissipation:160W
Qg Gate Charge:28nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:11A
Turn-on Delay Time:20ns
Rise Time:16ns
Fall Time:15ns
Gate Source Threshold:4V
Input Capacitance:900pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
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55.497

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46.7221

11680.525

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45.1414

33856.05

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44.422

55527.5

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