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STP11NM60FD

  • STP11NM60FD
  • STP11NM60FD
STP11NM60FD
Mosfets
STMicroelectronics
N-Channel 600 V
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Tube
0
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:0.45Ω
Rated Power Dissipation:160W
Qg Gate Charge:28nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:11A
Turn-on Delay Time:20ns
Rise Time:16ns
Fall Time:15ns
Gate Source Threshold:4V
Input Capacitance:900pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
: 0

50

55.497

2774.85

150

47.4415

7116.225

250

46.7221

11680.525

750

45.1414

33856.05

1250

44.422

55527.5

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