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STP11NM80

  • STP11NM80
  • STP11NM80
STP11NM80
Mosfets
STMicroelectronics
N-Channel 800 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:800V
Drain-Source On Resistance-Max:0.4Ω
Rated Power Dissipation:150|W
Qg Gate Charge:43.6nC
Package Style: TO-220-3 (TO-220AB)
PDF(1)

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160.3

8015

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133.124

13312.4

150

130.9758

19646.37

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128.24

32060

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