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STP12N50M2

  • STP12N50M2
  • STP12N50M2
STP12N50M2
Mosfets
STMicroelectronics
STP12N50M2: 500
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Tube
0
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:500V
Drain-Source On Resistance-Max:380mΩ
Rated Power Dissipation:85W
Qg Gate Charge:15nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:10A
Turn-on Delay Time:13.5ns
Turn-off Delay Time:8ns
Rise Time:10.5ns
Fall Time:34.5ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:560pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
: 0

50

16.1009

805.045

200

13.9427

2788.54

750

13.4411

10080.825

1500

13.2233

19834.95

3750

12.8635

48238.125

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