TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 0.43Ω |
Rated Power Dissipation: | 110W |
Qg Gate Charge: | 17nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 10A |
Turn-on Delay Time: | 11ns |
Turn-off Delay Time: | 38ns |
Rise Time: | 7.8ns |
Fall Time: | 12ns |
Gate Source Threshold: | 3V |
Technology: | MDmesh |
Input Capacitance: | 590pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
1000
20.2755
20275.5
2000
16.5366
33073.2
3000
16.3848
49154.4
4000
16.2428
64971.2