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STP13N65M2

  • STP13N65M2
  • STP13N65M2
STP13N65M2
Mosfets
STMicroelectronics
N-Channel 650 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:0.43Ω
Rated Power Dissipation:110W
Qg Gate Charge:17nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:10A
Turn-on Delay Time:11ns
Turn-off Delay Time:38ns
Rise Time:7.8ns
Fall Time:12ns
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:590pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
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