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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 0.22Ω |
| Rated Power Dissipation: | 110W |
| Qg Gate Charge: | 31nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 15A |
| Rise Time: | 7ns |
| Fall Time: | 9ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Technology: | Si |
| Height - Max: | 14.45mm |
| Length: | 10.4mm |
| Input Capacitance: | 1240pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
1
51.0386
51.0386
25
45.7189
1142.9725
75
44.1382
3310.365
250
42.4156
10603.9
750
40.8249
30618.675
