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STP190N55LF3

  • STP190N55LF3
  • STP190N55LF3
STP190N55LF3
Mosfets
STMicroelectronics
55 V 2.9 mOhm 1
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:55V
Drain-Source On Resistance-Max:3.7mΩ
Rated Power Dissipation:312W
Qg Gate Charge:60nC
Gate-Source Voltage-Max [Vgss]:18V
Drain Current:120A
Turn-on Delay Time:20ns
Turn-off Delay Time:160ns
Rise Time:40ns
Fall Time:40ns
Gate Source Threshold:2.5V
Input Capacitance:6200pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

58.2228

2911.14

150

49.7416

7461.24

250

49.0223

12255.575

750

47.2997

35474.775

1250

46.5802

58225.25

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