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STP25N60M2-EP

  • STP25N60M2-EP
  • STP25N60M2-EP
STP25N60M2-EP
Mosfets
STMicroelectronics
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:188mΩ
Rated Power Dissipation:150W
Qg Gate Charge:29nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:18A
Turn-on Delay Time:15ns
Turn-off Delay Time:61ns
Rise Time:10ns
Fall Time:16ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:MDmesh
Input Capacitance:1090pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
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